SIA421DJ-T1-GE3
SIA421DJ-T1-GE3
Nomor bagian:
SIA421DJ-T1-GE3
Pabrikan:
Vishay / Siliconix
Deskripsi:
MOSFET P-CH 30V 12A SC70-6
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
50417 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIA421DJ-T1-GE3.pdf

pengantar

We can supply SIA421DJ-T1-GE3, use the request quote form to request SIA421DJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA421DJ-T1-GE3.The price and lead time for SIA421DJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA421DJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Tegangan - Uji:950pF @ 15V
Tegangan - Breakdown:PowerPAK® SC-70-6 Single
Vgs (th) (Max) @ Id:35 mOhm @ 5.3A, 10V
Vgs (Max):4.5V, 10V
Teknologi:MOSFET (Metal Oxide)
Seri:TrenchFET®
Status RoHS:Tape & Reel (TR)
Rds Pada (Max) @ Id, Vgs:12A (Tc)
Polarisasi:PowerPAK® SC-70-6
Nama lain:SIA421DJ-T1-GE3TR
SIA421DJT1GE3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Nomor Bagian Produsen:SIA421DJ-T1-GE3
Kapasitansi Masukan (Ciss) (Max) @ VDS:29nC @ 10V
IGBT Jenis:±20V
Gate Charge (Qg) (Max) @ Vgs:3V @ 250µA
Fitur FET:P-Channel
Deskripsi yang Diperluas:P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Tiriskan untuk Sumber Tegangan (Vdss):-
Deskripsi:MOSFET P-CH 30V 12A SC70-6
Current - Continuous Drain (Id) @ 25 ° C:30V
kapasitansi Ratio:3.5W (Ta), 19W (Tc)
Email:[email protected]

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