SI6423DQ-T1-GE3
Nomor bagian:
SI6423DQ-T1-GE3
Pabrikan:
Vishay / Siliconix
Deskripsi:
MOSFET P-CH 12V 8.2A 8-TSSOP
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
52890 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SI6423DQ-T1-GE3.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Tegangan - Uji:-
Tegangan - Breakdown:8-TSSOP
Vgs (th) (Max) @ Id:8.5 mOhm @ 9.5A, 4.5V
Vgs (Max):1.8V, 4.5V
Teknologi:MOSFET (Metal Oxide)
Seri:TrenchFET®
Status RoHS:Tape & Reel (TR)
Rds Pada (Max) @ Id, Vgs:8.2A (Ta)
Polarisasi:8-TSSOP (0.173", 4.40mm Width)
Nama lain:SI6423DQ-T1-GE3TR
SI6423DQT1GE3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Nomor Bagian Produsen:SI6423DQ-T1-GE3
Kapasitansi Masukan (Ciss) (Max) @ VDS:110nC @ 5V
IGBT Jenis:±8V
Gate Charge (Qg) (Max) @ Vgs:800mV @ 400µA
Fitur FET:P-Channel
Deskripsi yang Diperluas:P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
Tiriskan untuk Sumber Tegangan (Vdss):-
Deskripsi:MOSFET P-CH 12V 8.2A 8-TSSOP
Current - Continuous Drain (Id) @ 25 ° C:12V
kapasitansi Ratio:1.05W (Ta)
Email:[email protected]

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