Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Tegangan - Uji: | - |
Tegangan - Breakdown: | 8-TSSOP |
Vgs (th) (Max) @ Id: | 8.5 mOhm @ 9.5A, 4.5V |
Vgs (Max): | 1.8V, 4.5V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | TrenchFET® |
Status RoHS: | Tape & Reel (TR) |
Rds Pada (Max) @ Id, Vgs: | 8.2A (Ta) |
Polarisasi: | 8-TSSOP (0.173", 4.40mm Width) |
Nama lain: | SI6423DQ-T1-GE3TR SI6423DQT1GE3 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 15 Weeks |
Nomor Bagian Produsen: | SI6423DQ-T1-GE3 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 110nC @ 5V |
IGBT Jenis: | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 800mV @ 400µA |
Fitur FET: | P-Channel |
Deskripsi yang Diperluas: | P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | MOSFET P-CH 12V 8.2A 8-TSSOP |
Current - Continuous Drain (Id) @ 25 ° C: | 12V |
kapasitansi Ratio: | 1.05W (Ta) |
Email: | [email protected] |