Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Tegangan - Uji: | - |
Tegangan - Breakdown: | 6-TSOP |
Vgs (th) (Max) @ Id: | 125 mOhm @ 2.4A, 4.5V |
Seri: | TrenchFET® |
Status RoHS: | Tape & Reel (TR) |
Rds Pada (Max) @ Id, Vgs: | 2A |
Listrik - Max: | 830mW |
Polarisasi: | SOT-23-6 Thin, TSOT-23-6 |
Nama lain: | SI3900DV-T1-E3TR SI3900DVT1E3 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 15 Weeks |
Nomor Bagian Produsen: | SI3900DV-T1-E3 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 4nC @ 4.5V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5V @ 250µA |
Fitur FET: | 2 N-Channel (Dual) |
Deskripsi yang Diperluas: | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
Tiriskan untuk Sumber Tegangan (Vdss): | Logic Level Gate |
Deskripsi: | MOSFET 2N-CH 20V 2A 6-TSOP |
Current - Continuous Drain (Id) @ 25 ° C: | 20V |
Email: | [email protected] |