SI3900DV-T1-E3
SI3900DV-T1-E3
Nomor bagian:
SI3900DV-T1-E3
Pabrikan:
Vishay / Siliconix
Deskripsi:
MOSFET 2N-CH 20V 2A 6-TSOP
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
70667 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SI3900DV-T1-E3.pdf

pengantar

We can supply SI3900DV-T1-E3, use the request quote form to request SI3900DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3900DV-T1-E3.The price and lead time for SI3900DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3900DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Tegangan - Uji:-
Tegangan - Breakdown:6-TSOP
Vgs (th) (Max) @ Id:125 mOhm @ 2.4A, 4.5V
Seri:TrenchFET®
Status RoHS:Tape & Reel (TR)
Rds Pada (Max) @ Id, Vgs:2A
Listrik - Max:830mW
Polarisasi:SOT-23-6 Thin, TSOT-23-6
Nama lain:SI3900DV-T1-E3TR
SI3900DVT1E3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Nomor Bagian Produsen:SI3900DV-T1-E3
Kapasitansi Masukan (Ciss) (Max) @ VDS:4nC @ 4.5V
Gate Charge (Qg) (Max) @ Vgs:1.5V @ 250µA
Fitur FET:2 N-Channel (Dual)
Deskripsi yang Diperluas:Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Tiriskan untuk Sumber Tegangan (Vdss):Logic Level Gate
Deskripsi:MOSFET 2N-CH 20V 2A 6-TSOP
Current - Continuous Drain (Id) @ 25 ° C:20V
Email:[email protected]

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