SI2342DS-T1-GE3
Nomor bagian:
SI2342DS-T1-GE3
Pabrikan:
Vishay / Siliconix
Deskripsi:
MOSFET N-CH 8V 6A SOT-23
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
29360 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SI2342DS-T1-GE3.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Tegangan - Uji:1070pF @ 4V
Tegangan - Breakdown:SOT-23
Vgs (th) (Max) @ Id:17 mOhm @ 7.2A, 4.5V
Vgs (Max):1.2V, 4.5V
Teknologi:MOSFET (Metal Oxide)
Seri:TrenchFET®
Status RoHS:Tape & Reel (TR)
Rds Pada (Max) @ Id, Vgs:6A (Tc)
Polarisasi:TO-236-3, SC-59, SOT-23-3
Nama lain:SI2342DS-T1-GE3-ND
SI2342DS-T1-GE3TR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Nomor Bagian Produsen:SI2342DS-T1-GE3
Kapasitansi Masukan (Ciss) (Max) @ VDS:15.8nC @ 4.5V
IGBT Jenis:±5V
Gate Charge (Qg) (Max) @ Vgs:800mV @ 250µA
Fitur FET:N-Channel
Deskripsi yang Diperluas:N-Channel 8V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23
Tiriskan untuk Sumber Tegangan (Vdss):-
Deskripsi:MOSFET N-CH 8V 6A SOT-23
Current - Continuous Drain (Id) @ 25 ° C:8V
kapasitansi Ratio:1.3W (Ta), 2.5W (Tc)
Email:[email protected]

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