R6020ENZ1C9
R6020ENZ1C9
Nomor bagian:
R6020ENZ1C9
Pabrikan:
LAPIS Semiconductor
Deskripsi:
MOSFET N-CH 600V 20A TO247
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
78141 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
R6020ENZ1C9.pdf

pengantar

We can supply R6020ENZ1C9, use the request quote form to request R6020ENZ1C9 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number R6020ENZ1C9.The price and lead time for R6020ENZ1C9 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# R6020ENZ1C9.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Tegangan - Uji:1400pF @ 25V
Tegangan - Breakdown:TO-247
Vgs (th) (Max) @ Id:196 mOhm @ 9.5A, 10V
Vgs (Max):10V
Teknologi:MOSFET (Metal Oxide)
Seri:-
Status RoHS:Tube
Rds Pada (Max) @ Id, Vgs:20A (Tc)
Polarisasi:TO-247-3
Suhu Operasional:150°C (TJ)
mount Jenis:Through Hole
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Nomor Bagian Produsen:R6020ENZ1C9
Kapasitansi Masukan (Ciss) (Max) @ VDS:60nC @ 10V
IGBT Jenis:±20V
Gate Charge (Qg) (Max) @ Vgs:4V @ 1mA
Fitur FET:N-Channel
Deskripsi yang Diperluas:N-Channel 600V 20A (Tc) 120W (Tc) Through Hole TO-247
Tiriskan untuk Sumber Tegangan (Vdss):-
Deskripsi:MOSFET N-CH 600V 20A TO247
Current - Continuous Drain (Id) @ 25 ° C:600V
kapasitansi Ratio:120W (Tc)
Email:[email protected]

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