Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 4.9V @ 150µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | DIRECTFET™ MN |
Seri: | HEXFET® |
Rds Pada (Max) @ Id, Vgs: | 9.5 mOhm @ 12A, 10V |
Power Disipasi (Max): | 2.8W (Ta), 89W (Tc) |
Pengemasan: | Cut Tape (CT) |
Paket / Case: | DirectFET™ Isometric MN |
Nama lain: | IRF6646TR1CT |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 2 (1 Year) |
Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 2060pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 80V |
Detil Deskripsi: | N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN |
Current - Continuous Drain (Id) @ 25 ° C: | 12A (Ta), 68A (Tc) |
Email: | [email protected] |