Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 2.25V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | DIRECTFET™ MX |
Seri: | HEXFET® |
Rds Pada (Max) @ Id, Vgs: | 3.3 mOhm @ 24A, 10V |
Power Disipasi (Max): | 2.8W (Ta), 89W (Tc) |
Pengemasan: | Cut Tape (CT) |
Paket / Case: | DirectFET™ Isometric MX |
Nama lain: | *IRF6612 IRF6612CT IRF6612CT-ND IRF6612TR1CT |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 3970pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 4.5V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 30V |
Detil Deskripsi: | N-Channel 30V 24A (Ta), 136A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX |
Current - Continuous Drain (Id) @ 25 ° C: | 24A (Ta), 136A (Tc) |
Email: | [email protected] |