HUF75333S3ST
HUF75333S3ST
Nomor bagian:
HUF75333S3ST
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 55V 60A D2PAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
10348 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
HUF75333S3ST.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:D²PAK (TO-263AB)
Seri:UltraFET™
Rds Pada (Max) @ Id, Vgs:16 mOhm @ 66A, 10V
Power Disipasi (Max):150W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:85nC @ 20V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):55V
Detil Deskripsi:N-Channel 55V 66A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25 ° C:66A (Tc)
Email:[email protected]

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