HUF75329D3S
Nomor bagian:
HUF75329D3S
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 55V 20A DPAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
7659 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
HUF75329D3S.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-252AA
Seri:UltraFET™
Rds Pada (Max) @ Id, Vgs:26 mOhm @ 20A, 10V
Power Disipasi (Max):128W (Tc)
Pengemasan:Tube
Paket / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1060pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 20V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):55V
Detil Deskripsi:N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA
Current - Continuous Drain (Id) @ 25 ° C:20A (Tc)
Email:[email protected]

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