Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Tegangan - Uji: | 5400pF @ 25V |
Tegangan - Breakdown: | TO-3PN |
Vgs (th) (Max) @ Id: | 28 mOhm @ 35A, 10V |
Vgs (Max): | 10V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | QFET® |
Status RoHS: | Tube |
Rds Pada (Max) @ Id, Vgs: | 70A (Tc) |
Polarisasi: | TO-3P-3, SC-65-3 |
Suhu Operasional: | -55°C ~ 175°C (TJ) |
mount Jenis: | Through Hole |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 12 Weeks |
Nomor Bagian Produsen: | FQA70N15 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 175nC @ 10V |
IGBT Jenis: | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 4V @ 250µA |
Fitur FET: | N-Channel |
Deskripsi yang Diperluas: | N-Channel 150V 70A (Tc) 330W (Tc) Through Hole TO-3PN |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | MOSFET N-CH 150V 70A TO-3P |
Current - Continuous Drain (Id) @ 25 ° C: | 150V |
kapasitansi Ratio: | 330W (Tc) |
Email: | [email protected] |