Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Tegangan - Uji: | 21pF @ 32.5V |
Tegangan - Breakdown: | Die |
Vgs (th) (Max) @ Id: | 530 mOhm @ 500mA, 5V |
Teknologi: | GaNFET (Gallium Nitride) |
Seri: | eGaN® |
Status RoHS: | Tray |
Rds Pada (Max) @ Id, Vgs: | 2A (Ta) |
Polarisasi: | Die |
Nama lain: | 917-EPC8002ENGR EPC8002ENGI |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Nomor Bagian Produsen: | EPC8002ENGR |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 0.14nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
Fitur FET: | N-Channel |
Deskripsi yang Diperluas: | N-Channel 65V 2A (Ta) Surface Mount Die |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | TRANS GAN 65V 2A BUMPED DIE |
Current - Continuous Drain (Id) @ 25 ° C: | 65V |
kapasitansi Ratio: | - |
Email: | [email protected] |