PSMN014-60LS,115
Modèle de produit:
PSMN014-60LS,115
Fabricant:
NXP Semiconductors / Freescale
La description:
MOSFET N-CH 60V QFN3333
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
70180 Pieces
Heure de livraison:
1-2 days
Fiche technique:
PSMN014-60LS,115.pdf

introduction

We can supply PSMN014-60LS,115, use the request quote form to request PSMN014-60LS,115 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PSMN014-60LS,115.The price and lead time for PSMN014-60LS,115 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PSMN014-60LS,115.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:8-DFN3333 (3.3x3.3)
Séries:-
Rds On (Max) @ Id, Vgs:14 mOhm @ 10A, 10V
Dissipation de puissance (max):65W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:8-VDFN Exposed Pad
Autres noms:568-5308-2
934064652115
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1264pF @ 30V
Charge de la porte (Qg) (Max) @ Vgs:19.6nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):60V
Description détaillée:N-Channel 60V 40A (Tc) 65W (Tc) Surface Mount 8-DFN3333 (3.3x3.3)
Courant - Drainage continu (Id) à 25 ° C:40A (Tc)
Email:[email protected]

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