HUF75333P3
Modèle de produit:
HUF75333P3
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET N-CH 55V 60A TO-220AB
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
51470 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.HUF75333P3.pdf2.HUF75333P3.pdf

introduction

We can supply HUF75333P3, use the request quote form to request HUF75333P3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HUF75333P3.The price and lead time for HUF75333P3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HUF75333P3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220AB
Séries:UltraFET™
Rds On (Max) @ Id, Vgs:16 mOhm @ 66A, 10V
Dissipation de puissance (max):150W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1300pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:85nC @ 20V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):55V
Description détaillée:N-Channel 55V 66A (Tc) 150W (Tc) Through Hole TO-220AB
Courant - Drainage continu (Id) à 25 ° C:66A (Tc)
Email:[email protected]

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