GP1M015A050FH
GP1M015A050FH
Modèle de produit:
GP1M015A050FH
Fabricant:
Global Power Technologies Group
La description:
MOSFET N-CH 500V 14A TO220F
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
9948 Pieces
Heure de livraison:
1-2 days
Fiche technique:
GP1M015A050FH.pdf

introduction

We can supply GP1M015A050FH, use the request quote form to request GP1M015A050FH pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GP1M015A050FH.The price and lead time for GP1M015A050FH depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GP1M015A050FH.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220F
Séries:-
Rds On (Max) @ Id, Vgs:440 mOhm @ 7A, 10V
Dissipation de puissance (max):53W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3 Full Pack
Autres noms:1560-1182-1
1560-1182-1-ND
1560-1182-5
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:2263pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:39nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):500V
Description détaillée:N-Channel 500V 14A (Tc) 53W (Tc) Through Hole TO-220F
Courant - Drainage continu (Id) à 25 ° C:14A (Tc)
Email:[email protected]

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