HUF75339G3
HUF75339G3
Varenummer:
HUF75339G3
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beskrivelse:
MOSFET N-CH 55V 75A TO-247
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
72754 Pieces
Leveringstid:
1-2 days
Datablad:
HUF75339G3.pdf

Introduktion

We can supply HUF75339G3, use the request quote form to request HUF75339G3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HUF75339G3.The price and lead time for HUF75339G3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HUF75339G3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:TO-247
Serie:UltraFET™
Rds On (Max) @ Id, Vgs:12 mOhm @ 75A, 10V
Power Dissipation (Max):200W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-247-3
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:2000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:130nC @ 20V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):55V
Detaljeret beskrivelse:N-Channel 55V 75A (Tc) 200W (Tc) Through Hole TO-247
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:75A (Tc)
Email:[email protected]

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