HUF75337S3S
HUF75337S3S
Artikelnummer:
HUF75337S3S
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 55V 75A D2PAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
57743 Pieces
Lieferzeit:
1-2 days
Datenblatt:
HUF75337S3S.pdf

Einführung

We can supply HUF75337S3S, use the request quote form to request HUF75337S3S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HUF75337S3S.The price and lead time for HUF75337S3S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HUF75337S3S.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:D²PAK (TO-263AB)
Serie:UltraFET™
Rds On (Max) @ Id, Vgs:14 mOhm @ 75A, 10V
Verlustleistung (max):175W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1775pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:109nC @ 20V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):55V
detaillierte Beschreibung:N-Channel 55V 75A (Tc) 175W (Tc) Surface Mount D²PAK (TO-263AB)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:75A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung