HUF75329D3
HUF75329D3
Part Number:
HUF75329D3
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 55V 20A IPAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
5984 Pieces
Delivery Time:
1-2 days
Data sheet:
HUF75329D3.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for HUF75329D3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HUF75329D3 by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-251AA
Series:UltraFET™
Rds On (Max) @ Id, Vgs:26 mOhm @ 20A, 10V
Power Dissipation (Max):128W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1060pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 20V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):55V
Detailed Description:N-Channel 55V 20A (Tc) 128W (Tc) Through Hole TO-251AA
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Email:[email protected]

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